Latest issues
- 2025, Volume 18 Issue 3 Full text
- 2025, Volume 18 Issue 2 Full text
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1 Full text
Effect of ion dose and accelerating voltage during focused ion beam Si (111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 3777
- Pages: 79-83
Nanooscillators based on carbon whiskers for detectors of optomechanical effects
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 3692
- Pages: 182-186
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 29
- 4490
- Pages: 341-345
Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling
- Year: 2024
- Volume: 17
- Issue: 1.1
- 19
- 2802
- Pages: 125-130
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si (111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 19
- 2304
- Pages: 28-33
Numerical modal analysis of GaP optical microcavity
- Year: 2024
- Volume: 17
- Issue: 3.1
- 26
- 2466
- Pages: 115-119
Polarized Raman scattering in strained GaN nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 3013
- Pages: 83-87