Sharov Vladislav А.
  • Affiliation
    Alferov University
  • St. Petersburg, Russian Federation

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 14
  • 1936
  • Pages: 79-83

Nanooscillators based on carbon whiskers for detectors of optomechanical effects

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 1994
  • Pages: 182-186

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 23
  • 2689
  • Pages: 341-345

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 14
  • 1298
  • Pages: 125-130

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 491
  • Pages: 28-33

Numerical modal analysis of GaP optical microcavity

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 9
  • 502
  • Pages: 115-119

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: