Mozharov Alexey M.
  • Affiliation
    Alferov University
  • St. Petersburg, Russian Federation
  • Publications

Thermal characteristics of III-V microlasers bonded onto silicon board

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 29
  • 2979
  • Pages: 108-113

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 27
  • 2933
  • Pages: 101-107

Hybrid Perovskite/GaP nanowires solar cells with enhanced photovoltaic performance

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 9
  • 2341
  • Pages: 90-93

Nanooscillators based on carbon whiskers for detectors of optomechanical effects

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 8
  • 2415
  • Pages: 182-186

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 22
  • 2494
  • Pages: 38-46

Numerical modal analysis of GaP optical microcavity

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 12
  • 946
  • Pages: 115-119

Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 12
  • 697
  • Pages: 84-87

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 26
  • 1353
  • Pages: 25-35

Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 25
  • 1152
  • Pages: 46-56

Silicon nanowire based sensorics of acids and bases

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 4
  • 156
  • Pages: 145-151

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