Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Evolution of the crystal microstructure of hybrid SiC/Si substrates grown by the method of atomic substitution
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 4506
- Pages: 113-118
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 3890
- Pages: 133-137
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 24
- 2274
- Pages: 182-186
Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 12
- 2361
- Pages: 275-278
Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 20
- Pages: 45-48
Effect of Al concentration on the pyroelectric properties of AlGaInP2 alloys
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 32
- Pages: 53-56
Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 2
- Pages: 172-177