Evgeny V. Pirogov
Evgeny V. Pirogov
Affiliation
Alferov University
St. Petersburg, Russian Federation

Evolution of the crystal microstructure of hybrid SiC/Si substrates grown by the method of atomic substitution

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 16
  • 4506
  • Pages: 113-118

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 3890
  • Pages: 133-137

Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 24
  • 2274
  • Pages: 182-186

Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 12
  • 2361
  • Pages: 275-278

Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 20
  • Pages: 45-48

Effect of Al concentration on the pyroelectric properties of AlGaInP2 alloys

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 32
  • Pages: 53-56

Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 2
  • Pages: 172-177