Alexander V. Uvarov
Alexander V. Uvarov
Affiliation
Alferov University
Publications

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 28
  • 4833
  • Pages: 145-149

Study of recombination and transport properties of a-Si:H (i)/ μc-Si:H (n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 4834
  • Pages: 150-154

Optimization of the contact grid for the GaP/Si solar cells

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 4850
  • Pages: 93-96

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 38
  • 5370
  • Pages: 123-127

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 35
  • 4652
  • Pages: 157-162

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 3747
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 10
  • 4027
  • Pages: 176-181

Flexible solar cells based on PEDOT: PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 49
  • 4437
  • Pages: 10-17

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 3692
  • Pages: 434-438

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 3401
  • Pages: 439-443

Study of the effect of solvents and surfactants on electrical properties of PEDOT: PSS films

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 29
  • 4311
  • Pages: 468-472

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 3572
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 30
  • 3815
  • Pages: 273-277

Gallium phosphide/black silicon heterojunction solar cells

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2113
  • Pages: 199-203

Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 12
  • 1757
  • Pages: 152-156

Degradation of solar heterostructured cells under the influence of electron flow

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 11
  • 1790
  • Pages: 251-255

Effect of surfactants on surface tension of PEDOT: PSS aqueous solution

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 15
  • 2176
  • Pages: 279-282

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 25
  • 2679
  • Pages: 17-24