SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
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Author Uvarov Alexander V.
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Latest issues
Uvarov Alexander V.

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
Kazakin A.N. Enns Ya.B. Uvarov A.V. Nikitina E.V.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 2012
  • Pages: 145-149

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
Uvarov A.V. Baranov A.I. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 13
  • 2122
  • Pages: 150-154

Optimization of the contact grid for the GaP/Si solar cells

Simulation of physical processes
Bogdanova M.V. Uvarov A.V. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 9
  • 2008
  • Pages: 93-96

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
Maksimova A.A. Uvarov A.V. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 2215
  • Pages: 123-127

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
Sinitskaya O.A. Shubina K.Yu. Mokhov D.V. Uvarov A.V. Filatov V.V. Mizerov A.M. Timoshnev S.N. Nikitina E.V.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 18
  • 2058
  • Pages: 157-162

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
Kiianitsyn S.Yu. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 5
  • 1383
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 6
  • 1395
  • Pages: 176-181

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Neplokh V.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 36
  • 1592
  • Pages: 10-17

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 989
  • Pages: 434-438

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
Sinitskaya O.A. Shubina K.Yu. Mokhov D.V. Uvarov A.V. Mizerov A.M. Nikitina E.V.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 5
  • 802
  • Pages: 439-443

Study of the effect of solvents and surfactants on electrical properties of PEDOT:PSS films

Physical electronics
Pozdeev V.A. Uvarov A.V. Gudovskikh A.S. Maksimova A.A. Vyacheslavova E.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 1177
  • Pages: 468-472

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
Vtorygin G.E. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 952
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
Maksimova A.A. Uvarov A.V. Pozdeev V.A. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 828
  • Pages: 273-277