Uvarov Alexander V.
  • Publications

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 21
  • 2853
  • Pages: 145-149

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 14
  • 2914
  • Pages: 150-154

Optimization of the contact grid for the GaP/Si solar cells

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 9
  • 2859
  • Pages: 93-96

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 3227
  • Pages: 123-127

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 27
  • 2888
  • Pages: 157-162

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 2200
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 2253
  • Pages: 176-181

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 38
  • 2412
  • Pages: 10-17

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 11
  • 1808
  • Pages: 434-438

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 6
  • 1633
  • Pages: 439-443

Study of the effect of solvents and surfactants on electrical properties of PEDOT:PSS films

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 2168
  • Pages: 468-472

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 14
  • 1790
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 24
  • 1856
  • Pages: 273-277

Gallium phosphide/black silicon heterojunction solar cells

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 5
  • 345
  • Pages: 199-203

Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 1
  • 133
  • Pages: 152-156

Degradation of solar heterostructured cells under the influence of electron flow

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 1
  • 138
  • Pages: 251-255

Effect of surfactants on surface tension of PEDOT:PSS aqueous solution

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 3
  • 140
  • Pages: 279-282

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 12
  • 557
  • Pages: 17-24

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