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- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
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- 2025, Volume 18 Issue 3 Full text
Publications
Orcid ID
0000-0002-0061-6687
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 30
- 5139
- Pages: 145-149
Study of recombination and transport properties of a-Si:H (i)/ μc-Si:H (n) contact system for crystalline silicon solar cells
- Year: 2022
- Volume: 15
- Issue: 3.2
- 17
- 5147
- Pages: 150-154
Optimization of the contact grid for the GaP/Si solar cells
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 5200
- Pages: 93-96
Plasma deposited indium phosphide and its electrophysical properties
- Year: 2022
- Volume: 15
- Issue: 3.3
- 40
- 5767
- Pages: 123-127
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 35
- 5000
- Pages: 157-162
Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 4067
- Pages: 90-95
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 11
- 4374
- Pages: 176-181
Flexible solar cells based on PEDOT: PSS and vertically aligned silicon structures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 49
- 4789
- Pages: 10-17
Heterojunction solar cells based on nanostructured black silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 4014
- Pages: 434-438
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 3727
- Pages: 439-443
Study of the effect of solvents and surfactants on electrical properties of PEDOT: PSS films
- Year: 2023
- Volume: 16
- Issue: 3.1
- 30
- 4686
- Pages: 468-472
Capacitance-voltage characterization of BP layers grown by PECVD mode
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 3881
- Pages: 473-478
Boron phosphide grown by PECVD and its optical properties
- Year: 2023
- Volume: 16
- Issue: 3.2
- 34
- 4196
- Pages: 273-277
Gallium phosphide/black silicon heterojunction solar cells
- Year: 2024
- Volume: 17
- Issue: 3.1
- 20
- 2467
- Pages: 199-203
Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology
- Year: 2024
- Volume: 17
- Issue: 3.2
- 14
- 2117
- Pages: 152-156
Degradation of solar heterostructured cells under the influence of electron flow
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2143
- Pages: 251-255
Effect of surfactants on surface tension of PEDOT: PSS aqueous solution
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 2525
- Pages: 279-282
Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3
- 26
- 3052
- Pages: 17-24
Black silicon formation using cryogenic etching and photoresist layer
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 66
- Pages: 182-186
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 42
- Pages: 247-251
Capacitance characterization of GaN/InP multilayer structures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 42
- Pages: 258-262