SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
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    Articles by keywords "InAs"

    Role of the buffer layer on the mechanical strength of nanowire-substrate interface

    Quantum wires, quantum dots, and other low-dimensional systems
    Lutsevich M.A.Sharov V.A.Kaveev A.K.Fedorov V.V.Mukhin I.S.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 32
    • Pages: 75-80

    Radiative recombination in InAs/InAsSb/InAsSbP heterostructures

    Heterostructures, superlattices, quantum wells
    Kirilenko I.D.Mynbaev K.D.Romanov V.V.Bazhenov N.L.Moiseev K.D.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 35
    • Pages: 33-38

    InAsSb solid solution optocouple for carbon dioxide analysis

    Physical electronics
    Kunkov R.E.Karandashev S.A.Klimov A.A.Lukhmyrina T.S.Remennyi M.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 4
    • 649
    • Pages: 178-182

    HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures

    Atom physics and physics of clusters and nanostructures
    Klimov A.A.Kunkov R.E.Lukhmyrina T.S.Matveev B.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 4
    • 697
    • Pages: 110-114

    Optical studies of InAs/InAsSb/InAsSbP heterostructures

    Condensed matter physics
    Ruzhevich M.S.Kirilenko I.D.Chumanov I.V.Firsov D.D.Komkov O.S.Mynbaev K.D.Romanov V.V.Moiseev K.D.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 5
    • 676
    • Pages: 91-94

    Infrared photodetectors based on InAsP epitaxial nanowires on silicon

    Condensed matter physics
    Goltaev A. S.Fedina S.V.Fedorov V.V.Mozharov A.M.Novikova K.N.Maksimova A.A.Baranov A.I.Kaveev A.K.Pavlov A.V.Miniv D.V.Ustimenko R.V.Vinnichenko M.Ya.Mukhin I.S.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 52
    • 4422
    • Pages: 9-21

    Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

    Optoelectronic and nanoelectronic devices
    Kirilenko I.D.Ruzhevich M.S.Romanov V.V.Moiseev K.D.Dorogov M.V.Tomkovich M.V.Firsov D.D.Chumanov I.V.Komkov O.S.Mynbaev K.D.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 22
    • 3908
    • Pages: 105-110

    Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon

    Atom physics and physics of clusters and nanostructures
    Kaveev A.K.Fedorov V.V.Miniv D.V.
    • Year: 2024
    • Volume: 17
    • Issue: 4
    • 22
    • 4005
    • Pages: 88-97

    Photoluminescence of self-induced InAs nanowires diluted with nitrogen

    Condensed matter physics
    Ruzhevich M.S.Mynbaev K.D.Bazhenov N.L.Kaveev A.K.Pavlov A.V.Fedorov V.V.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 15
    • 3257
    • Pages: 34-37

    Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

    Heterostructures, superlattices, quantum wells
    Ruzhevich M.S.Mynbaev K.D.Bazhenov N.L.Romanov V.V.Moiseev K.D.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 27
    • 3667
    • Pages: 77-82

    Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

    Physical materials technology
    Semakova A.A.Romanov V.V.Bazhenov N.L.Mynbaev K.D.Moiseev K.D.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 12
    • 5064
    • Pages: 191-195

    Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

    Condensed matter physics
    Balakirev S.V.Kirichenko D.V.Chernenko N.E.Shandyba N.A.Eremenko M.M.Solodovnik M.S.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 13
    • 5895
    • Pages: 42-47