Articles by keywords "InAs"
Differences in the interaction of RAD51 and UvsX recombinases with DNA revealed by single-molecule experiments
- Year: 2026
- Volume: 19
- Issue: 2
- 9
- 362
- Pages: 147-159
Role of the buffer layer on the mechanical strength of nanowire-substrate interface
- Year: 2026
- Volume: 19
- Issue: 1.1
- 4
- 486
- Pages: 75-80
Radiative recombination in InAs/InAsSb/InAsSbP heterostructures
- Year: 2026
- Volume: 19
- Issue: 1.1
- 8
- 498
- Pages: 33-38
InAsSb solid solution optocouple for carbon dioxide analysis
- Year: 2025
- Volume: 18
- Issue: 3.2
- 4
- 1018
- Pages: 178-182
HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.2
- 7
- 1112
- Pages: 110-114
Optical studies of InAs/InAsSb/InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 1056
- Pages: 91-94
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 54
- 4868
- Pages: 9-21
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 27
- 4280
- Pages: 105-110
Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon
- Year: 2024
- Volume: 17
- Issue: 4
- 23
- 4470
- Pages: 88-97
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 3658
- Pages: 34-37
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 4029
- Pages: 77-82
Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 12
- 5409
- Pages: 191-195
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 6279
- Pages: 42-47

