Articles by keywords "InAs"

Differences in the interaction of RAD51 and UvsX recombinases with DNA revealed by single-molecule experiments

Biophysics and medical physics
  • Year: 2026
  • Volume: 19
  • Issue: 2
  • 9
  • 362
  • Pages: 147-159

Role of the buffer layer on the mechanical strength of nanowire-substrate interface

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 4
  • 486
  • Pages: 75-80

Radiative recombination in InAs/InAsSb/InAsSbP heterostructures

Heterostructures, superlattices, quantum wells
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 8
  • 498
  • Pages: 33-38

InAsSb solid solution optocouple for carbon dioxide analysis

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 4
  • 1018
  • Pages: 178-182

HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 7
  • 1112
  • Pages: 110-114

Optical studies of InAs/InAsSb/InAsSbP heterostructures

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 6
  • 1056
  • Pages: 91-94

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 54
  • 4868
  • Pages: 9-21

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 27
  • 4280
  • Pages: 105-110

Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 23
  • 4470
  • Pages: 88-97

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 15
  • 3658
  • Pages: 34-37

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 4029
  • Pages: 77-82

Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 12
  • 5409
  • Pages: 191-195

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 6279
  • Pages: 42-47