Melnichenko Ivan A.

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 2901
  • Pages: 260-264

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 26
  • 2660
  • Pages: 22-27

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 37
  • 2699
  • Pages: 456-462

Microring lasers with a waveguide coupler

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 46
  • 2665
  • Pages: 126-132

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 6
  • 1791
  • Pages: 255-260

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 3
  • 496
  • Pages: 38-42

Mode leakage into substrate in microdisk lasers

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 2
  • 257
  • Pages: 212-216

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