Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 5185
- Pages: 260-264
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 32
- 4866
- Pages: 22-27
1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 47
- 4812
- Pages: 456-462
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 3988
- Pages: 255-260
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2644
- Pages: 38-42
Mode leakage into substrate in microdisk lasers
- Year: 2024
- Volume: 17
- Issue: 3.2
- 18
- 2351
- Pages: 212-216
Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 142
- Pages: 237-241