Melnichenko Ivan A.

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 19
  • 3395
  • Pages: 260-264

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 30
  • 3210
  • Pages: 22-27

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 40
  • 3191
  • Pages: 456-462

Microring lasers with a waveguide coupler

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 53
  • 3216
  • Pages: 126-132

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 8
  • 2294
  • Pages: 255-260

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 983
  • Pages: 38-42

Mode leakage into substrate in microdisk lasers

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 10
  • 761
  • Pages: 212-216

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