Anna  S. Dragunova
Anna S. Dragunova

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 4978
  • Pages: 31-35

Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 4613
  • Pages: 163-166

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 4863
  • Pages: 311-314

Integrated optical transceiver based on III-V microdisk laser and photodiode

Experimental technique and devices
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 27
  • 4635
  • Pages: 371-375

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 23
  • 4125
  • Pages: 153-157

Thermal characteristics of III-V microlasers bonded onto silicon board

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 33
  • 4216
  • Pages: 108-113

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 45
  • 4411
  • Pages: 114-120

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 61
  • 4675
  • Pages: 179-184

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 15
  • 1754
  • Pages: 143-147