Dragunova Anna S.
Latest issues
- 2024, Volume 17 Issue 3
- 2024, Volume 17 Issue 2
- 2024, Volume 17 Issue 1.1
- 2024, Volume 17 Issue 1 Full text
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 2656
- Pages: 31-35
Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 2517
- Pages: 163-166
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 2499
- Pages: 311-314
Integrated optical transceiver based on III-V microdisk laser and photodiode
- Year: 2022
- Volume: 15
- Issue: 3.3
- 22
- 2507
- Pages: 371-375
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 2005
- Pages: 153-157
Thermal characteristics of III-V microlasers bonded onto silicon board
- Year: 2023
- Volume: 16
- Issue: 1.2
- 21
- 2088
- Pages: 108-113
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 32
- 2140
- Pages: 114-120
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 43
- 2309
- Pages: 179-184