Latest issues
- 2025, Volume 18 Issue 3 Full text
- 2025, Volume 18 Issue 2 Full text
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1 Full text
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 4965
- Pages: 31-35
Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 4607
- Pages: 163-166
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 4857
- Pages: 311-314
Integrated optical transceiver based on III-V microdisk laser and photodiode
- Year: 2022
- Volume: 15
- Issue: 3.3
- 27
- 4626
- Pages: 371-375
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 21
- 4114
- Pages: 153-157
Thermal characteristics of III-V microlasers bonded onto silicon board
- Year: 2023
- Volume: 16
- Issue: 1.2
- 33
- 4206
- Pages: 108-113
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 45
- 4403
- Pages: 114-120
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 61
- 4664
- Pages: 179-184
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 1750
- Pages: 143-147