Mukhin Ivan S.
  • Publications

Ultra-high vacuum formation of silver films for light-emitting tunnel junctions

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 20
  • 3317
  • Pages: 31-34

Low-adhesive silicone rubbers for flexible light-emitting devices

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 7
  • 2961
  • Pages: 320-325

Study of ion transport in single solid state nanopores formed by optical and ion lithography

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 15
  • 2595
  • Pages: 385-388

Investigation of ion transport in solid-state nanopores upon optical radiation

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 16
  • 2977
  • Pages: 389-392

Fabrication of silicon optical nanoantennas by ultrahigh vacuum STM lithography

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 8
  • 2683
  • Pages: 103-107

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 23
  • 2660
  • Pages: 101-107

Nanooscillators based on carbon whiskers for detectors of optomechanical effects

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 8
  • 2148
  • Pages: 182-186

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 15
  • 1442
  • Pages: 125-130

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 21
  • 2187
  • Pages: 38-46

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 644
  • Pages: 34-37

Numerical modal analysis of GaP optical microcavity

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 10
  • 641
  • Pages: 115-119

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 36
  • 1777
  • Pages: 120-133

Suppressed phase segregation in CsPbIBr2 based PeLEC

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 5
  • 450
  • Pages: 66-70

Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 10
  • 406
  • Pages: 84-87

Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 7
  • 409
  • Pages: 207-211

Luminescence enhancement in inelastic tunnelling of electrons by changing the geometry of the tunnelling contact

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 5
  • 404
  • Pages: 236-240

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 19
  • 943
  • Pages: 25-35

Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 20
  • 850
  • Pages: 46-56

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