Mukhin Ivan S.
  • Affiliation
    Peter the Great St. Petersburg Polytechnic University
  • Publications

Ultra-high vacuum formation of silver films for light-emitting tunnel junctions

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 2669
  • Pages: 31-34

Low-adhesive silicone rubbers for flexible light-emitting devices

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 6
  • 2445
  • Pages: 320-325

Study of ion transport in single solid state nanopores formed by optical and ion lithography

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 8
  • 2050
  • Pages: 385-388

Investigation of ion transport in solid-state nanopores upon optical radiation

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 16
  • 2433
  • Pages: 389-392

Fabrication of silicon optical nanoantennas by ultrahigh vacuum STM lithography

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 6
  • 2098
  • Pages: 103-107

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 18
  • 2109
  • Pages: 101-107

Nanooscillators based on carbon whiskers for detectors of optomechanical effects

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 1509
  • Pages: 182-186

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 8
  • 863
  • Pages: 125-130

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 19
  • 1385
  • Pages: 38-46

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 25
  • 1059
  • Pages: 120-133

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 3
  • 127
  • Pages: 25-35

Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 2
  • 123
  • Pages: 46-56