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Publications
Orcid ID
0000-0001-9792-045X
Ultra-high vacuum formation of silver films for light-emitting tunnel junctions
- Year: 2022
- Volume: 15
- Issue: 3.2
- 22
- 5153
- Pages: 31-34
Low-adhesive silicone rubbers for flexible light-emitting devices
- Year: 2022
- Volume: 15
- Issue: 3.3
- 8
- 4670
- Pages: 320-325
Study of ion transport in single solid state nanopores formed by optical and ion lithography
- Year: 2023
- Volume: 16
- Issue: 1.1
- 20
- 4085
- Pages: 385-388
Investigation of ion transport in solid-state nanopores upon optical radiation
- Year: 2023
- Volume: 16
- Issue: 1.1
- 18
- 4537
- Pages: 389-392
Fabrication of silicon optical nanoantennas by ultrahigh vacuum STM lithography
- Year: 2023
- Volume: 16
- Issue: 1.2
- 15
- 4317
- Pages: 103-107
Interband photoluminescence of InAs (P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 33
- 4091
- Pages: 101-107
Nanooscillators based on carbon whiskers for detectors of optomechanical effects
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 3649
- Pages: 182-186
Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling
- Year: 2024
- Volume: 17
- Issue: 1.1
- 19
- 2758
- Pages: 125-130
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
- Year: 2024
- Volume: 17
- Issue: 1
- 23
- 4041
- Pages: 38-46
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2286
- Pages: 34-37
Numerical modal analysis of GaP optical microcavity
- Year: 2024
- Volume: 17
- Issue: 3.1
- 24
- 2414
- Pages: 115-119
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 42
- 3509
- Pages: 120-133
Suppressed phase segregation in CsPbIBr2 based PeLEC
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2278
- Pages: 66-70
Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode
- Year: 2024
- Volume: 17
- Issue: 3.2
- 18
- 2075
- Pages: 84-87
Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles
- Year: 2024
- Volume: 17
- Issue: 3.2
- 14
- 1977
- Pages: 207-211
Luminescence enhancement in inelastic tunnelling of electrons by changing the geometry of the tunnelling contact
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2211
- Pages: 236-240
Creation of optical isolated GaP (NAs) microcavities on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 29
- 2889
- Pages: 25-35
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 27
- 2731
- Pages: 46-56
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 31
- 3175
- Pages: 9-21