Vyacheslavova Ekaterina A.
  • Publications

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 55
  • 2796
  • Pages: 10-15

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 14
  • 2629
  • Pages: 150-154

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 2881
  • Pages: 123-127

Modification of the optical and electrical properties of NiO films by thermal annealing

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 2538
  • Pages: 285-289

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 25
  • 2112
  • Pages: 43-48

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 6
  • 1887
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 1938
  • Pages: 176-181

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 36
  • 2095
  • Pages: 10-17

Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 6
  • 1498
  • Pages: 151-156

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 9
  • 1518
  • Pages: 434-438

Study of the effect of solvents and surfactants on electrical properties of PEDOT:PSS films

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 1826
  • Pages: 468-472

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 1478
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 19
  • 1512
  • Pages: 273-277

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 2
  • 132
  • Pages: 17-24

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 3
  • 127
  • Pages: 25-35