SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
en Английский
Version for the visually impaired
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
Author Vyacheslavova Ekaterina A.
Submit Your Paper
Latest issues
Vyacheslavova Ekaterina A.
  • Publications

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
Kondratev V.M. Vyacheslavova E.A. Morozov Ivan A. Nalimova S.S. Moshnikov V.A. Gudovskikh A.S. Bolshakov A.D.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 57
  • 3672
  • Pages: 10-15

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
Uvarov A.V. Baranov A.I. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 3463
  • Pages: 150-154

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
Maksimova A.A. Uvarov A.V. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 3956
  • Pages: 123-127

Modification of the optical and electrical properties of NiO films by thermal annealing

Physical materials technology
Enns Ya.B. Kazakin A.N. Komarevtcev I.M. Vyacheslavova E.A. Kondrateva A.S. Mishin M.V.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 3441
  • Pages: 285-289

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
Kondratev V.M. Vyacheslavova E.A. Morozov Ivan A. Nalimova S.S. Moshnikov V.A. Gudovskikh A.S. Bolshakov A.D.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 27
  • 3072
  • Pages: 43-48

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
Kiianitsyn S.Yu. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 11
  • 2811
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 8
  • 2886
  • Pages: 176-181

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Neplokh V.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 42
  • 3078
  • Pages: 10-17

Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy

Condensed matter physics
Kondratev V.M. Kozko I.A. Karaseva E.P. Vyacheslavova E.A. Shugabaev T.M. Svinkin N.А. Bolshakov A.D.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 2373
  • Pages: 151-156

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 2431
  • Pages: 434-438

Study of the effect of solvents and surfactants on electrical properties of PEDOT:PSS films

Physical electronics
Pozdeev V.A. Uvarov A.V. Gudovskikh A.S. Maksimova A.A. Vyacheslavova E.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 26
  • 2864
  • Pages: 468-472

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
Vtorygin G.E. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 2347
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
Maksimova A.A. Uvarov A.V. Pozdeev V.A. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 28
  • 2503
  • Pages: 273-277

Effect of light incidence angle on the characteristics of silicon solar cells with different texturing

Atom physics and physics of clusters and nanostructures
Yarchuk E.Y Vyacheslavova E.A. Monastyrenko A.O. Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 5
  • 886
  • Pages: 134-137

Gallium phosphide/black silicon heterojunction solar cells

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 8
  • 930
  • Pages: 199-203

Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

Physics of molecules, clusters and nanostructures
Maksimova A.A. Uvarov A.V. Vyacheslavova E.A. Baranov A.I. Yarchuk E.Y Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 5
  • 714
  • Pages: 152-156

Degradation of solar heterostructured cells under the influence of electron flow

Physical optics
Mikhaylov O.P. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S. Shvarts M.Z. Terukov E.I.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 5
  • 718
  • Pages: 251-255

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
Baranov A.I. Vtorygin G.E. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 21
  • 1329
  • Pages: 17-24

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
Dvoretckaia L.N. Mozharov A.M. Komarov S.D. Vyacheslavova E.A. Moiseev E.I. Fedorov V.V. Mukhin I.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 26
  • 1427
  • Pages: 25-35

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
Kozko I.A. Karaseva E.P. Svinkin N.А. Rider М.А. Vyacheslavova E.A. Gridchin V.O. Fedorov V.V. Kondratev V.M. Bolshakov A.D.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 1
  • 262
  • Pages: 77-82

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: