Vyacheslavova Ekaterina A.
  • Publications

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 57
  • 3616
  • Pages: 10-15

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 3420
  • Pages: 150-154

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 3886
  • Pages: 123-127

Modification of the optical and electrical properties of NiO films by thermal annealing

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 3383
  • Pages: 285-289

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 27
  • 3007
  • Pages: 43-48

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 11
  • 2756
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 8
  • 2836
  • Pages: 176-181

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 42
  • 3029
  • Pages: 10-17

Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 2314
  • Pages: 151-156

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 2368
  • Pages: 434-438

Study of the effect of solvents and surfactants on electrical properties of PEDOT:PSS films

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 26
  • 2803
  • Pages: 468-472

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 19
  • 2288
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 28
  • 2445
  • Pages: 273-277

Effect of light incidence angle on the characteristics of silicon solar cells with different texturing

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 5
  • 830
  • Pages: 134-137

Gallium phosphide/black silicon heterojunction solar cells

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 8
  • 875
  • Pages: 199-203

Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 5
  • 661
  • Pages: 152-156

Degradation of solar heterostructured cells under the influence of electron flow

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 5
  • 668
  • Pages: 251-255

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 21
  • 1261
  • Pages: 17-24

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 26
  • 1353
  • Pages: 25-35

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 1
  • 168
  • Pages: 77-82

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