Ekaterina A. Vyacheslavova
Ekaterina A. Vyacheslavova
Affiliation
Alferov University
Publications

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 57
  • 5440
  • Pages: 10-15

Study of recombination and transport properties of a-Si:H (i)/ μc-Si:H (n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 5283
  • Pages: 150-154

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 42
  • 5932
  • Pages: 123-127

Modification of the optical and electrical properties of NiO films by thermal annealing

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 5288
  • Pages: 285-289

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 29
  • 4829
  • Pages: 43-48

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 19
  • 4244
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 11
  • 4517
  • Pages: 176-181

Flexible solar cells based on PEDOT: PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 49
  • 4971
  • Pages: 10-17

Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 4036
  • Pages: 151-156

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 4150
  • Pages: 434-438

Study of the effect of solvents and surfactants on electrical properties of PEDOT: PSS films

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 30
  • 4854
  • Pages: 468-472

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 4018
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 34
  • 4370
  • Pages: 273-277

Effect of light incidence angle on the characteristics of silicon solar cells with different texturing

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 2549
  • Pages: 134-137

Gallium phosphide/black silicon heterojunction solar cells

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 20
  • 2603
  • Pages: 199-203

Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 14
  • 2251
  • Pages: 152-156

Degradation of solar heterostructured cells under the influence of electron flow

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 11
  • 2276
  • Pages: 251-255

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 26
  • 3222
  • Pages: 17-24

Creation of optical isolated GaP (NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 33
  • 3488
  • Pages: 25-35

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 11
  • 3508
  • Pages: 77-82

Modification of silicon nanowires with silver nanoparticles for gas sensor applications

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 4
  • 247
  • Pages: 81-84

Black silicon formation using cryogenic etching and photoresist layer

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 3
  • 269
  • Pages: 182-186

Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 256
  • Pages: 247-251

Capacitance characterization of GaN/InP multilayer structures

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 245
  • Pages: 258-262