Latest issues
- 2025, Volume 18 Issue 3 Full text
- 2025, Volume 18 Issue 2 Full text
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1 Full text
Articles from section "Structure growth, surface, and interfaces "
Structural and electrophysical properties of barium titanate epitaxial films
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 3198
- Pages: 40-45
Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer
- Year: 2025
- Volume: 18
- Issue: 1.1
- 19
- 3127
- Pages: 34-39
Frontal surface passivation of the photovoltaic converter based on narrow-band materials
- Year: 2025
- Volume: 18
- Issue: 1.1
- 14
- 3204
- Pages: 28-33
Nanostructured engineering of ZnO:Cu:Al nanomaterials for sensor and photocatalytic applications
- Year: 2025
- Volume: 18
- Issue: 1.1
- 14
- 3185
- Pages: 22-27
Epitaxial growth AlGaAs from Bi-containing melts
- Year: 2025
- Volume: 18
- Issue: 1.1
- 12
- 3296
- Pages: 17-21
Electron irradiation as a method for controlling luminescence of hexagonal boron nitride
- Year: 2024
- Volume: 17
- Issue: 1.1
- 33
- 3160
- Pages: 49-54
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 3327
- Pages: 43-48
Investigation of nanosized structures using internal friction effect
- Year: 2024
- Volume: 17
- Issue: 1.1
- 18
- 2989
- Pages: 37-42
Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling
- Year: 2023
- Volume: 16
- Issue: 1.3
- 21
- 3940
- Pages: 62-66
Formation and magnetic properties of ultrathin cobalt silicides films on Si surface
- Year: 2023
- Volume: 16
- Issue: 1.3
- 48
- 4108
- Pages: 55-61
Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates
- Year: 2023
- Volume: 16
- Issue: 1.3
- 30
- 3886
- Pages: 50-54
Improved polymer residuals removing after the graphene transfer to enhance sensors performance
- Year: 2023
- Volume: 16
- Issue: 1.3
- 58
- 4166
- Pages: 44-49
Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique
- Year: 2023
- Volume: 16
- Issue: 1.3
- 38
- 4029
- Pages: 39-43