SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
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Latest issues

Articles from section "Structure growth, surface, and interfaces "

Electron irradiation as a method for controlling luminescence of hexagonal boron nitride

Structure growth, surface, and interfaces
Gogina O.A. Petrov Yu.V. Vyvenko O.F. Kovalchuk S. Bolotin K.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 6
  • 349
  • Pages: 49-54

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
Osinnykh I.V. Malin T.V. Milakhin D.S. Zhuravlev K.V.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 5
  • 356
  • Pages: 43-48

Investigation of nanosized structures using internal friction effect

Structure growth, surface, and interfaces
Kozodaev D.A. Novikov I.A. Moshnikov V.A.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 5
  • 373
  • Pages: 37-42

Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling

Structure growth, surface, and interfaces
Maidebura Y. Malin T.V. Zhuravlev K.V.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 15
  • 1511
  • Pages: 62-66

Formation and magnetic properties of ultrathin cobalt silicides films on Si surface

Structure growth, surface, and interfaces
Monyak A.A. Grebenyuk G.S. Lobanova E.Yu. Kuzmin V.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 18
  • 1592
  • Pages: 55-61

Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

Structure growth, surface, and interfaces
Kelner O.A. Tsatsulnikov A.F. Nikolaev A.E. Zavarin E.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 1463
  • Pages: 50-54

Improved polymer residuals removing after the graphene transfer to enhance sensors performance

Structure growth, surface, and interfaces
Barsukov L.A. Nekrasov N.P. Romashkin A.V. Bobrinetskiy I.I. Levin D.D. Nevolin V.K.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 31
  • 1611
  • Pages: 44-49

Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique

Structure growth, surface, and interfaces
Amelchuk D.G. Mynbaeva M.G. Smirnov A.N. Davydov V.Yu. Lebedev S.P. Lebedev A.A.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 21
  • 1566
  • Pages: 39-43