Articles by keywords "InAs"

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 33
  • 3342
  • Pages: 9-21

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 17
  • 3124
  • Pages: 105-110

Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 21
  • 2963
  • Pages: 88-97

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2401
  • Pages: 34-37

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 2870
  • Pages: 77-82

Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 9
  • 4314
  • Pages: 191-195

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 5013
  • Pages: 42-47