Articles by keywords "InAs"
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 34
- 3465
- Pages: 9-21
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 19
- 3226
- Pages: 105-110
Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon
- Year: 2024
- Volume: 17
- Issue: 4
- 21
- 3071
- Pages: 88-97
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 2502
- Pages: 34-37
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 2951
- Pages: 77-82
Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 9
- 4403
- Pages: 191-195
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 5114
- Pages: 42-47