Articles by keywords "InAs"

InAsSb solid solution optocouple for carbon dioxide analysis

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 3
  • 216
  • Pages: 178-182

HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 2
  • 221
  • Pages: 110-114

Optical studies of InAs/InAsSb/InAsSbP heterostructures

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 243
  • Pages: 91-94

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 40
  • 3860
  • Pages: 9-21

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 20
  • 3502
  • Pages: 105-110

Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 21
  • 3455
  • Pages: 88-97

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 15
  • 2792
  • Pages: 34-37

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 3220
  • Pages: 77-82

Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 10
  • 4655
  • Pages: 191-195

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 5410
  • Pages: 42-47