SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
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    Articles by keywords "HEMT"

    Study of increasing the energy efficiency of monolithic integrated circuits of the radiometer receiving path using computer modeling methods

    Physical electronics
    Tikhomirov V.G.Chizhikov S.V.Gudkov A.G.Sidorov I.A.Sinev I.S.Kushnerev A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 2
    • 532
    • Pages: 159-163

    Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

    Heterostructures, superlattices, quantum wells
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Nikitina E.V.Tsatsulnikov A.F.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 24
    • 3985
    • Pages: 46-51

    Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

    Condensed matter physics
    Nikitina E.V.Berezovskaya T.N.Pirogov E.V.Vasilkova E.I.Shubina K.Yu.Sinitskaya O.A.Sobolev M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 4407
    • Pages: 133-137

    Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

    Structure growth, surface, and interfaces
    Kelner O.A.Tsatsulnikov A.F.Nikolaev A.E.Zavarin E.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 34
    • 4785
    • Pages: 50-54

    2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

    Atom physics and physics of clusters and nanostructures
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Tsatsulnikov A.F.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 32
    • 4836
    • Pages: 380-384

    GaN IC E-mode p-channel and n-channel transistors simulation

    Physical electronics
    Egorkin V.I.Zemlyakov V.E.Zaitsev A.A.Chukanova O.B.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 26
    • 5461
    • Pages: 134-137

    Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

    Condensed matter physics
    Kozlovsky E.Yu.Spivak Yu.M.Moshnikov V.A.Ponomareva Alina A.Seleznev B.I.Ivanov N.N.Jelannov A.V.
    • Year: 2010
    • Issue: 1
    • 1
    • 9219
    • Pages: 18-28