SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
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    Articles by keywords "HEMT"

    Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

    Optoelectronic and nanoelectronic devices
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Rodin S.N.Tsatsulnikov A.F.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 0
    • 104
    • Pages: 129-133

    Study of increasing the energy efficiency of monolithic integrated circuits of the radiometer receiving path using computer modeling methods

    Physical electronics
    Tikhomirov V.G.Chizhikov S.V.Gudkov A.G.Sidorov I.A.Sinev I.S.Kushnerev A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 2
    • 620
    • Pages: 159-163

    Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

    Heterostructures, superlattices, quantum wells
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Nikitina E.V.Tsatsulnikov A.F.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 24
    • 4085
    • Pages: 46-51

    Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

    Condensed matter physics
    Nikitina E.V.Berezovskaya T.N.Pirogov E.V.Vasilkova E.I.Shubina K.Yu.Sinitskaya O.A.Sobolev M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 12
    • 4509
    • Pages: 133-137

    Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

    Structure growth, surface, and interfaces
    Kelner O.A.Tsatsulnikov A.F.Nikolaev A.E.Zavarin E.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 35
    • 4900
    • Pages: 50-54

    2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

    Atom physics and physics of clusters and nanostructures
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Tsatsulnikov A.F.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 32
    • 4917
    • Pages: 380-384

    GaN IC E-mode p-channel and n-channel transistors simulation

    Physical electronics
    Egorkin V.I.Zemlyakov V.E.Zaitsev A.A.Chukanova O.B.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 27
    • 5566
    • Pages: 134-137

    Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

    Condensed matter physics
    Kozlovsky E.Yu.Spivak Yu.M.Moshnikov V.A.Ponomareva Alina A.Seleznev B.I.Ivanov N.N.Jelannov A.V.
    • Year: 2010
    • Issue: 1
    • 1
    • 9301
    • Pages: 18-28