Blokhin Sergei A.
  • Affiliation
    Ioffe Institute
  • St. Petersburg, Russian Federation

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 36
  • 2216
  • Pages: 456-462

1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 17
  • 2021
  • Pages: 153-159

1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 2013
  • Pages: 163-169

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 1378
  • Pages: 352-356

Vertical-cavity surface-emitting lasers for compact atomic sensors

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 1631
  • Pages: 16-22

Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 28
  • 1476
  • Pages: 9-15

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 9
  • 1483
  • Pages: 50-55