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Publications
Orcid ID
0000-0002-3640-677X
Formation of a dielectric sublayer heterostructure of lead-tin telluride
- Year: 2023
- Volume: 16
- Issue: 1.1
- 19
- 4164
- Pages: 158-161
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2286
- Pages: 34-37
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 42
- 3509
- Pages: 120-133
Formation of diluted nitride InAs1-хNх core-shell nanowires on silicon
- Year: 2024
- Volume: 17
- Issue: 4
- 19
- 2852
- Pages: 88-97
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 31
- 3176
- Pages: 9-21