-
Biography
Research interests: semiconductors, nanostructures, photonics.
Latest issues
- 2025, Volume 18 Issue 3 Full text
- 2025, Volume 18 Issue 2 Full text
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1 Full text
Dmitry A. Firsov
Position
Professor
Affiliation
Peter the Great St. Petersburg Polytechnic University
Degree
Doctor of Physics and Mathematics
Publications
The topical trends in semiconductor and nanostructure physics, semiconductor opto- and nanoelectronics (on the 18th All-Russion Youth Conference)
- Year: 2017
- Volume: 10
- Issue: 2
- 69
- 8521
- Pages: 123-132
Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells
- Year: 2012
- Issue: 3
- 0
- 8700
- Pages: 9-15
Optical absorption in Ge/Si quantum dots at different population densities of the dots states
- Year: 2012
- Issue: 4
- 0
- 8890
- Pages: 9-15
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 429
- 9194
- Pages: 109-114
Investigation of photoditazin optical properties for expanding possibilities of photodynamic therapy
- Year: 2014
- Issue: 3
- 21
- 8918
- Pages: 110-117
Digital system of fluorescence visualization for antibacterial photodynamic therapy in dentistry
- Year: 2015
- Issue: 4
- 411
- 9098
- Pages: 77-83
Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics
- Year: 2016
- Issue: 1
- 243
- 8470
- Pages: 98-108
Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation
- Year: 2016
- Issue: 4
- 88
- 8673
- Pages: 56-65
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells
- Year: 2016
- Issue: 4
- 116
- 8776
- Pages: 66-76
Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 8436
- Pages: 25-30
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 84
- 5255
- Pages: 32-43
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 39
- 3885
- Pages: 14-19
Interband photoluminescence of InAs (P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 33
- 4092
- Pages: 101-107
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 62
- 3282
- Pages: 12-19
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 3278
- Pages: 68-76
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 2723
- Pages: 143-148
Photoinduced light absorption in Ge/Si quantum dots
- Year: 2024
- Volume: 17
- Issue: 1.1
- 42
- 3289
- Pages: 105-112
Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface
- Year: 2025
- Volume: 18
- Issue: 1.1
- 16
- 3099
- Pages: 58-66