Andryushkin Vladislav

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 40
  • 3150
  • Pages: 456-462

1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 19
  • 2896
  • Pages: 153-159

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 22
  • 2287
  • Pages: 352-356

Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 3
  • 195
  • Pages: 117-121

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