Vladislav V. Andryushkin
Vladislav V. Andryushkin
Affiliation
ITMO University
St. Petersburg, Russian Federation

1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 45
  • 4758
  • Pages: 456-462

1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 22
  • 4442
  • Pages: 153-159

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 28
  • 3950
  • Pages: 352-356

Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 16
  • 3358
  • Pages: 117-121

Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 72
  • Pages: 95-98