Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 4999
- Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 4975
- Pages: 59-63
BaTiO3 nanocrystalline thin films: synthesis, plasma treatment, and memristive effect
- Year: 2023
- Volume: 16
- Issue: 1.2
- 31
- 4641
- Pages: 241-246
Effect of plasma-chemical treatment of Si (001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 3992
- Pages: 122-127
Effect of internal mechanical stresses in a multilayer structure on displacement for various designs of microelectromechanical membranes
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2380
- Pages: 121-124
All-silicon elements of terahertz photonics obtained by plasma etching
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 66
- Pages: 165-168