Lendyashova Vera V.

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 27
  • 2912
  • Pages: 75-79

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 34
  • 2539
  • Pages: 114-120

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 5
  • 1749
  • Pages: 255-260

Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 24
  • 1268
  • Pages: 137-142

Pressure and temperature sensing via ZnO-PDMS based membrane for wearable electronic applications

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 497
  • Pages: 63-67

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 453
  • Pages: 306-309

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 4
  • 234
  • Pages: 143-147

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: