Ustinov Victor M.
  • Affiliation
    Submicron Heterostructures for Microelectronics Research and Engineering Center, RAS
  • St. Petersburg, Russian Federation

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 20
  • 2148
  • Pages: 21-24

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 33
  • 1570
  • Pages: 456-462

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 810
  • Pages: 352-356

Vertical-cavity surface-emitting lasers for compact atomic sensors

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 14
  • 977
  • Pages: 16-22

Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 19
  • 909
  • Pages: 9-15

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 6
  • 216
  • Pages: 165-170