Tsatsulnikov Andrey F.

Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 7129
  • Pages: 32-36

Type LED dynamically controlled light sources for novel lighting technology

Experimental technique and devices
  • Year: 2014
  • Issue: 4
  • 468
  • 7910
  • Pages: 38-47

The wireless network of controlled energy-effective LED lighting sources

Experimental technique and devices
  • Year: 2015
  • Issue: 1
  • 373
  • 7628
  • Pages: 50-60

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 3576
  • Pages: 21-24

2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 26
  • 2826
  • Pages: 380-384

Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 28
  • 2844
  • Pages: 50-54

Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 2
  • 177
  • Pages: 46-51

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