Articles by keywords "heterojunction"
Gallium phosphide/black silicon heterojunction solar cells
- Year: 2024
- Volume: 17
- Issue: 3.1
- 5
- 224
- Pages: 199-203
Effect of light incidence angle on the characteristics of silicon solar cells with different texturing
- Year: 2024
- Volume: 17
- Issue: 3.1
- 1
- 219
- Pages: 134-137
Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 1136
- Pages: 160-164
A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas
- Year: 2024
- Volume: 17
- Issue: 1
- 36
- 1396
- Pages: 21-28
Capacitance-voltage characterization of BP layers grown by PECVD mode
- Year: 2023
- Volume: 16
- Issue: 3.1
- 14
- 1664
- Pages: 473-478
Heterojunction solar cells based on nanostructured black silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 1708
- Pages: 434-438
Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD
- Year: 2023
- Volume: 16
- Issue: 1.3
- 7
- 2081
- Pages: 90-95
Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 6
- 2296
- Pages: 191-195
Photovoltaic characteristics of HJT photo converters of laser radiation at a wavelength of 1064 nm
- Year: 2023
- Volume: 16
- Issue: 1.2
- 21
- 2410
- Pages: 52-58
Two-dimensional plasmon excitations in a random array of quantum antidots
- Year: 2023
- Volume: 16
- Issue: 1.1
- 9
- 2333
- Pages: 137-141
Optimization of the contact grid for the GaP/Si solar cells
- Year: 2022
- Volume: 15
- Issue: 3.3
- 9
- 2741
- Pages: 93-96
A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature
- Year: 2022
- Volume: 15
- Issue: 2
- 25
- 3754
- Pages: 17-25
The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect
- Year: 2020
- Volume: 13
- Issue: 2
- 35
- 5787
- Pages: 17-26
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 6530
- Pages: 43-48
Numerical simulation of the resonance-tunnel structure based on the Schottky barrier and a GaAs/AlGaAs heterojunction
- Year: 2018
- Volume: 11
- Issue: 1
- 50
- 6712
- Pages: 9-17