Articles by keywords "heterojunction"

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 2
  • 210
  • Pages: 160-164

A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 29
  • 567
  • Pages: 21-28

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 872
  • Pages: 473-478

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 897
  • Pages: 434-438

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 5
  • 1311
  • Pages: 90-95

Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 5
  • 1484
  • Pages: 191-195

Photovoltaic characteristics of HJT photo converters of laser radiation at a wavelength of 1064 nm

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 20
  • 1651
  • Pages: 52-58

Two-dimensional plasmon excitations in a random array of quantum antidots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 8
  • 1584
  • Pages: 137-141

Optimization of the contact grid for the GaP/Si solar cells

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 9
  • 1937
  • Pages: 93-96

A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 2
  • 25
  • 2945
  • Pages: 17-25

The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 2
  • 32
  • 4965
  • Pages: 17-26

AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 5831
  • Pages: 43-48

Numerical simulation of the resonance-tunnel structure based on the Schottky barrier and a GaAs/AlGaAs heterojunction

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 50
  • 5979
  • Pages: 9-17

The rectifying properties of C60 fullerene-based structures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 6042
  • Pages: 18-21