Photovoltaic characteristics of HJT photo converters of laser radiation at a wavelength of 1064 nm

Physical electronics

The possibility of efficient conversion of continual infrared laser radiation by heterojunction technology a-Si:H/c-Si photovoltaic converters is demonstrated. The photovoltaic characteristics of eight different types of heterojunction structures were investigated. The photovoltaic converters of the n-α-Si/n-c-Si/p-α-Si heterojunction structure with contact grid Ag turned out to be the best in terms of dark currents, external quantum efficiency, I-V characteristics, and conversion efficiency of laser radiation with 1064 nm wavelength at a power density up to 2 kW/m2. The maximum efficiency ~ 24.5% of this structure was reached at power density of 1 kW/m2.