The resonance tunneling diode has been widely studied because of its importance in the field of nanoelectronic technology and its potential applications in very high speed/functionality devices and circuits. Even though much progress has been made in this regard, the most popular structure of these diods consists of barriers created by heterojunctions only. In this paper, we present numerical simulation results for a two-barrier resonance-tunnel structure consisting of the Schottky barrier and a GaAs/AlGaAs heterojunction. We considered its potential application to the resonance-tunnel diodes working at room temperature. The configuration of this structure was optimized using numerical simulation methods. A current voltage characteristic was simulated by the example of the optimized structure, and the influence of the thermal current on the obtained dependence was analyzed.
Citation: A.S. Abrosimov, V.N. Agarev, Numerical simulation of the resonance-tunnel structure based on the Schottky barrier and a GaAs/AlGaAs heterojunction, St. Petersburg Polytechnical State University Journal. Physics and Mathematics. 11 (1) (2018) 9 – 17. DOI: 10.18721/JPM.11101