Articles by keywords "AlGaN"
A microwave method for measuring the low-frequency noise of transistors
- Year: 2024
- Volume: 17
- Issue: 2
- 17
- 1872
- Pages: 61-70
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 12
- 2152
- Pages: 249-254
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 11
- 2328
- Pages: 223-227
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 2362
- Pages: 449-453
Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 2749
- Pages: 182-187
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 3105
- Pages: 170-175
Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 2743
- Pages: 85-89
2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 2807
- Pages: 380-384
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 7070
- Pages: 43-48
Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions
- Year: 2012
- Issue: 3
- 0
- 7652
- Pages: 28-31
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 7095
- Pages: 28-31