SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles by keywords "AlGaN"

A microwave method for measuring the low-frequency noise of transistors

Experimental technique and devices
Usychenko V. G. Chernova A. S.
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 12
  • 977
  • Pages: 61-70

Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer

Physical materials technology
Lenshin A.S. Zolotukhin D.S. Seredin P.V. Mizerov A.M.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 9
  • 1345
  • Pages: 249-254

Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

Physical materials technology
Grashchenko A.S. Kukushkin S.A. Sharofidinov Sh.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 9
  • 1380
  • Pages: 223-227

Simulation and analysis of heterostructures for normally-off p-channel GaN transistor

Physical electronics
Kozlovskaya E.A. Kurbanbaeva D.M. Tsarik K.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 1453
  • Pages: 449-453

Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content

Novel materials
Semenov A. Nechaev D. Berezina D. Guseva Yu.A. Kulagina M.M. Smirnova I.P. Zadiranov Y. M. Troshkov S. Shmidt N.P.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 16
  • 1889
  • Pages: 182-187

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
Ivanov A.E. Talnishnikh Nadezhda A. Chernyakov A.E. Zakgeim A.L.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 25
  • 2288
  • Pages: 170-175

Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm

Heterostructures, superlattices, quantum wells
Talnishnikh Nadezhda A. Ivanov A.E. Shabunina E.I. Shmidt N.P.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 15
  • 1870
  • Pages: 85-89

2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

Atom physics and physics of clusters and nanostructures
Arteev D.S. Sakharov A.V. Nikolaev A.E. Zavarin E.E. Tsatsulnikov A.F.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 19
  • 1974
  • Pages: 380-384

AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor

Condensed matter physics
Bereznyak A.F.
  • Year: 2009
  • Issue: 1
  • 0
  • 6355
  • Pages: 43-48

Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions

Condensed matter physics
Lamkin I.A. Menkovich E.A. Tarasov S.A.
  • Year: 2012
  • Issue: 3
  • 0
  • 6784
  • Pages: 28-31

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
Mamaev V.V. Sidorov V.G. Petrov S.I. Alexeev A.N.
  • Year: 2012
  • Issue: 4
  • 0
  • 6302
  • Pages: 28-31