Artem I. Khrebtov
Artem I. Khrebtov
Affiliation
St. Petersburg State University
St. Petersburg, Russian Federation

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 24
  • 4440
  • Pages: 153-157

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 3932
  • Pages: 255-260

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2765
  • Pages: 306-309

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 16
  • 2071
  • Pages: 143-147

Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 73
  • Pages: 30-35

Growth of GaN nanowires with InN inserts by PA-MBE

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 60
  • Pages: 139-142

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 1
  • 64
  • Pages: 148-151

Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 50
  • Pages: 152-155