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- 2025, Volume 18 Issue 3.1 Full text
Artem I. Khrebtov
Affiliation
St. Petersburg State University
St. Petersburg, Russian Federation
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 25
- 4635
- Pages: 153-157
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 4140
- Pages: 255-260
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 2944
- Pages: 306-309
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 2257
- Pages: 143-147
Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 322
- Pages: 30-35
Growth of GaN nanowires with InN inserts by PA-MBE
- Year: 2025
- Volume: 18
- Issue: 3.1
- 2
- 304
- Pages: 139-142
MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 342
- Pages: 148-151
Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 286
- Pages: 152-155