Ivanov Anton E.

A comprehensive study of electroluminescence and temperature distribution of “UX:3” AlInGaN LED

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 15
  • 3436
  • Pages: 142-146

Comprehensive study of the power capabilities of UV-C LEDs in pulsed and continuous modes

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 10
  • 2788
  • Pages: 167-171

Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 2806
  • Pages: 85-89

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 3165
  • Pages: 170-175

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 11
  • 1760
  • Pages: 155-159

Competing processes in nitride alloys in MQWs of LEDs

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 4
  • 729
  • Pages: 177-181

Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 6
  • 246
  • Pages: 140-144

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