Sergey V. Balakirev
Sergey V. Balakirev

Effect of FIB-modification of Si (111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 15
  • 5049
  • Pages: 36-41

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 5249
  • Pages: 42-47

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 4888
  • Pages: 48-53

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 23
  • 4999
  • Pages: 54-58

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 23
  • 4975
  • Pages: 59-63

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 19
  • 5061
  • Pages: 315-319

Droplet epitaxy of site-controlled In/GaAs (001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 4048
  • Pages: 41-46

Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 38
  • 4581
  • Pages: 53-58

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 3853
  • Pages: 64-68

Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 4055
  • Pages: 74-78

Effect of ion dose and accelerating voltage during focused ion beam Si (111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 4086
  • Pages: 79-83

Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 4112
  • Pages: 193-197

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si (111)

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 19
  • 2592
  • Pages: 28-33

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 12
  • 2573
  • Pages: 38-42

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs (111) surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2725
  • Pages: 58-62

Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 15
  • 2492
  • Pages: 75-78

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2587
  • Pages: 79-83

Ab initio study of In adsorption on AlxGa1-xAs substrates at the first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2830
  • Pages: 100-104

Simulation of an all-optical logical comparator based on a GaAs photonic crystal operating at a wavelength of 1.3 μm

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 12
  • 2641
  • Pages: 105-109

Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 85
  • Pages: 19-22

Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 43
  • Pages: 237-241

Localized Ga droplets formation on nanopatterned silicon substrates

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 25
  • Pages: 57-59

Simulation of light propagation in waveguides coupled to hexagonal microcavities formed in the GaAs-based photonic crystal

Simulation of physical processes
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 16
  • Pages: 86-90

Formation of site-controlled InAs quantum dots on nanopatterned GaAs (111)B surfaces

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 13
  • Pages: 115-118