SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Author Balakirev Sergey V.
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Latest issues
Balakirev Sergey V.

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
Shandyba N.A. Kirichenko D.V. Chernenko N.E. Eremenko M.M. Balakirev S.V. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 2618
  • Pages: 36-41

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
Balakirev S.V. Kirichenko D.V. Chernenko N.E. Shandyba N.A. Eremenko M.M. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 9
  • 2718
  • Pages: 42-47

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
Chernenko N.E. Kirichenko D.V. Shandyba N.A. Balakirev S.V. Eremenko M.M. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 2560
  • Pages: 48-53

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
Eremenko M.M. Balakirev S.V. Chernenko N.E. Shandyba N.A. Solodovnik M.S. Ageev O.A.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 2610
  • Pages: 54-58

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
Nikitina L.S. Lakhina E.A. Eremenko M.M. Balakirev S.V. Chernenko N.E. Shandyba N.A. Solodovnik M.S. Ageev O.A.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 2649
  • Pages: 59-63

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
Balakirev S.V. Lakhina E.A. Kirichenko D.V. Chernenko N.E. Shandyba N.A. Eremenko M.M. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 2661
  • Pages: 315-319

Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics
Balakirev S.V. Kirichenko D.V. Shandyba N.A. Chernenko N.E. Solodovnik M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 1565
  • Pages: 41-46

Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

Condensed matter physics
Lakhina E.A. Shandyba N.A. Chernenko N.E. Kirichenko D.V. Balakirev S.V. Solodovnik M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 31
  • 1868
  • Pages: 53-58

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
Chernenko N.E. Makhov I.S. Balakirev S.V. Kirichenko D.V. Shandyba N.A. Kryzhanovskaya N.V. Solodovnik M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 1558
  • Pages: 64-68

Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

Condensed matter physics
Kirichenko D.V. Chernenko N.E. Shandyba N.A. Balakirev S.V. Solodovnik M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 1621
  • Pages: 74-78

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
Shandyba N.A. Kirichenko D.V. Chernenko N.E. Sharov V.A. Balakirev S.V. Solodovnik M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 1645
  • Pages: 79-83

Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

Simulation of physical processes
Dukhan D.D. Balakirev S.V. Voloshina E.N. Solodovnik M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 6
  • 1607
  • Pages: 193-197

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
Shandyba N.A. Eremenko M.M. Sharov V.A. Balakirev S.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 2
  • 146
  • Pages: 28-33

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
Chernenko N.E. Makhov I.S. Melnichenko I.A. Yakunina K.D. Balakirev S.V. Kryzhanovskaya N.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 0
  • 135
  • Pages: 38-42

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface

Condensed matter physics
Lakhina E.A. Chernenko N.E. Shandyba N.A. Kirichenko D.V. Balakirev S.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 1
  • 141
  • Pages: 58-62

Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

Condensed matter physics
Eremenko M.M. Shandyba N.A. Chernenko N.E. Jityaeva J.Yu. Balakirev S.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 1
  • 133
  • Pages: 75-78

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
Kirichenko D.V. Makhov I.S. Balakirev S.V. Kryzhanovskaya N.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 2
  • 139
  • Pages: 79-83

Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy

Simulation of physical processes
Dukhan D.D. Balakirev S.V. Voloshina E.N. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 1
  • 127
  • Pages: 100-104

Simulation of an all-optical logical comparator based on a GaAs photonic crystal operating at a wavelength of 1.3 μm

Simulation of physical processes
Pleninger M. Balakirev S.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 2
  • 141
  • Pages: 105-109