Eremenko Mikhail M.
Latest issues
- 2025, Volume 18 Issue 1
- 2024, Volume 17 Issue 4 Full text
- 2024, Volume 17 Issue 3.2 Full text
- 2024, Volume 17 Issue 3.1 Full text
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 3231
- Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 3348
- Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 3105
- Pages: 48-53
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 3200
- Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 3212
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 3243
- Pages: 315-319
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 2229
- Pages: 122-127
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 8
- 793
- Pages: 28-33
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 768
- Pages: 75-78