SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Author Eremenko Mikhail M.
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Eremenko Mikhail M.

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
Shandyba N.A. Kirichenko D.V. Chernenko N.E. Eremenko M.M. Balakirev S.V. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 2618
  • Pages: 36-41

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
Balakirev S.V. Kirichenko D.V. Chernenko N.E. Shandyba N.A. Eremenko M.M. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 9
  • 2718
  • Pages: 42-47

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
Chernenko N.E. Kirichenko D.V. Shandyba N.A. Balakirev S.V. Eremenko M.M. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 2560
  • Pages: 48-53

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
Eremenko M.M. Balakirev S.V. Chernenko N.E. Shandyba N.A. Solodovnik M.S. Ageev O.A.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 2610
  • Pages: 54-58

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
Nikitina L.S. Lakhina E.A. Eremenko M.M. Balakirev S.V. Chernenko N.E. Shandyba N.A. Solodovnik M.S. Ageev O.A.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 2649
  • Pages: 59-63

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
Balakirev S.V. Lakhina E.A. Kirichenko D.V. Chernenko N.E. Shandyba N.A. Eremenko M.M. Solodovnik M.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 2661
  • Pages: 315-319

Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs

Condensed matter physics
Eremenko M.M. Nikitina L.S. Jityaeva J.Yu. Lakhina E.A. Klimin V.S. Ageev O.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 1612
  • Pages: 122-127

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
Shandyba N.A. Eremenko M.M. Sharov V.A. Balakirev S.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 2
  • 146
  • Pages: 28-33

Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

Condensed matter physics
Eremenko M.M. Shandyba N.A. Chernenko N.E. Jityaeva J.Yu. Balakirev S.V. Solodovnik M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 1
  • 133
  • Pages: 75-78