SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics
Peter the Great St. Petersburg Polytechnic University
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ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Author
Eremenko Mikhail M.
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Latest issues
2024
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Volume 17
Issue 4
2024
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Volume 17
Issue 3.2
Full text
2024
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Volume 17
Issue 3.1
Full text
2024
,
Volume 17
Issue 3
Full text
Eremenko Mikhail M.
eryomenko@sfedu.ru
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
Condensed matter physics
Shandyba N.A.
Kirichenko D.V.
Chernenko N.E.
Eremenko M.M.
Balakirev S.V.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
12
2916
Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
Condensed matter physics
Balakirev S.V.
Kirichenko D.V.
Chernenko N.E.
Shandyba N.A.
Eremenko M.M.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
9
2994
Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
Condensed matter physics
Chernenko N.E.
Kirichenko D.V.
Shandyba N.A.
Balakirev S.V.
Eremenko M.M.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
13
2818
Pages: 48-53
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
Condensed matter physics
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
Year: 2022
Volume: 15
Issue: 3.3
21
2878
Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
Condensed matter physics
Nikitina L.S.
Lakhina E.A.
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
Year: 2022
Volume: 15
Issue: 3.3
17
2924
Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
Physical materials technology
Balakirev S.V.
Lakhina E.A.
Kirichenko D.V.
Chernenko N.E.
Shandyba N.A.
Eremenko M.M.
Solodovnik M.S.
Year: 2022
Volume: 15
Issue: 3.3
16
2946
Pages: 315-319
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
Condensed matter physics
Eremenko M.M.
Nikitina L.S.
Jityaeva J.Yu.
Lakhina E.A.
Klimin V.S.
Ageev O.A.
Year: 2023
Volume: 16
Issue: 3.1
17
1907
Pages: 122-127
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
Condensed matter physics
Shandyba N.A.
Eremenko M.M.
Sharov V.A.
Balakirev S.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
6
491
Pages: 28-33
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
Condensed matter physics
Eremenko M.M.
Shandyba N.A.
Chernenko N.E.
Jityaeva J.Yu.
Balakirev S.V.
Solodovnik M.S.
Year: 2024
Volume: 17
Issue: 3.1
6
465
Pages: 75-78
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