Shandyba Nikita A.
Latest issues
- 2024, Volume 17 Issue 4 Full text
- 2024, Volume 17 Issue 3.2 Full text
- 2024, Volume 17 Issue 3.1 Full text
- 2024, Volume 17 Issue 3 Full text
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 3069
- Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 9
- 3159
- Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 2955
- Pages: 48-53
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 3031
- Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 3054
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 3084
- Pages: 315-319
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 2033
- Pages: 41-46
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 34
- 2397
- Pages: 53-58
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 1977
- Pages: 64-68
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 2107
- Pages: 74-78
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 2087
- Pages: 79-83
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 630
- Pages: 28-33
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 6
- 658
- Pages: 58-62
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 608
- Pages: 75-78