Igor  V. Ilkiv
Igor V. Ilkiv

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 32
  • 5247
  • Pages: 75-79

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 14
  • 3932
  • Pages: 289-293

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 30
  • 4982
  • Pages: 341-345

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 4
  • 343
  • Pages: 148-151

Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 1
  • 287
  • Pages: 152-155

MBE growth of GaAs nanowires with a silicon rich particle on the top

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 4.1
  • 1
  • 172
  • Pages: 62-66