Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si (111) substrates

The possibility of depositing colloidal nanoparticles onto an amorphous GaAs layer grown on Si (111) substrates and the direct molecular beam epitaxy of size-uniform GaAs nanowires with diameters below 20 nm were demonstrated. Examination of the nanowires revealed a nearly pure wurtzite crystal structure with low stacking fault density.