Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
Authors:
Chumanov Ivan V. Firsov Dmitrii Kolyada Dmitry V. Komkov Oleg V Skvortsov Ilya V. Mashanov Vladimir I. Timofeev Vyacheslav A.
Abstract:

The work demonstrates the use of photomodulation FTIR spectroscopy to study structures containing epitaxial layers of GeSn and GeSiSn in the temperature range of 79–180 K. The photoreflectance method has enabled observation of direct interband transitions, and evaluation of the impact of temperature variation and mechanical strain on their energy values.