Latest issues
- 2025, Volume 18 Issue 1
- 2024, Volume 17 Issue 4 Full text
- 2024, Volume 17 Issue 3.2 Full text
- 2024, Volume 17 Issue 3.1 Full text
Articles from section "Bulk properties of semiconductors"
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 22
- 1647
- Pages: 31-36
Destruction of the conducting state by ac electric field in naphthalocyanine complexes
- Year: 2024
- Volume: 17
- Issue: 1.1
- 16
- 1473
- Pages: 25-30
Features of isovalent doping of gallium arsenide with bismuth ions
- Year: 2024
- Volume: 17
- Issue: 1.1
- 12
- 1625
- Pages: 20-24
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 43
- 1699
- Pages: 12-19
Spin-dependent photon echo for an ensemble of three-level systems
- Year: 2024
- Volume: 17
- Issue: 1.1
- 40
- 1587
- Pages: 6-11
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 19
- 2692
- Pages: 33-38
Magnetoresistivity and Hall effect in Weyl semimetal WTe2
- Year: 2023
- Volume: 16
- Issue: 1.3
- 90
- 3026
- Pages: 26-32
Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy
- Year: 2023
- Volume: 16
- Issue: 1.3
- 29
- 2952
- Pages: 20-25
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 36
- 2532
- Pages: 14-19
Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model
- Year: 2023
- Volume: 16
- Issue: 1.3
- 43
- 2663
- Pages: 7-13