Articles from section "Bulk properties of semiconductors"

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 22
  • 1805
  • Pages: 31-36

Destruction of the conducting state by ac electric field in naphthalocyanine complexes

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 17
  • 1611
  • Pages: 25-30

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 13
  • 1765
  • Pages: 20-24

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 45
  • 1859
  • Pages: 12-19

Spin-dependent photon echo for an ensemble of three-level systems

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 40
  • 1756
  • Pages: 6-11

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 20
  • 2841
  • Pages: 33-38

Magnetoresistivity and Hall effect in Weyl semimetal WTe2

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 92
  • 3169
  • Pages: 26-32

Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 30
  • 3104
  • Pages: 20-25

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 36
  • 2683
  • Pages: 14-19

Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 43
  • 2796
  • Pages: 7-13

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