Articles from section "Bulk properties of semiconductors"

Non-ideal experimental Berry phase in the topological insulator Bi2Se3 single crystal

Bulk properties of semiconductors
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 35
  • 3645
  • Pages: 11-16

Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

Bulk properties of semiconductors
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 51
  • 3571
  • Pages: 6-10

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 36
  • 3250
  • Pages: 31-36

Destruction of the conducting state by ac electric field in naphthalocyanine complexes

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 22
  • 3093
  • Pages: 25-30

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 18
  • 3502
  • Pages: 20-24

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 63
  • 3569
  • Pages: 12-19

Spin-dependent photon echo for an ensemble of three-level systems

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 46
  • 3258
  • Pages: 6-11

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 23
  • 4410
  • Pages: 33-38

Magnetoresistivity and Hall effect in Weyl semimetal WTe2

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 103
  • 4827
  • Pages: 26-32

Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 34
  • 4692
  • Pages: 20-25

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 40
  • 4115
  • Pages: 14-19

Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 49
  • 4179
  • Pages: 7-13