Articles from section "Bulk properties of semiconductors"

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 18
  • 1159
  • Pages: 31-36

Destruction of the conducting state by ac electric field in naphthalocyanine complexes

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 15
  • 1011
  • Pages: 25-30

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 11
  • 1113
  • Pages: 20-24

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 35
  • 1217
  • Pages: 12-19

Spin-dependent photon echo for an ensemble of three-level systems

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 34
  • 1046
  • Pages: 6-11

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 18
  • 2230
  • Pages: 33-38

Magnetoresistivity and Hall effect in Weyl semimetal WTe2

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 87
  • 2557
  • Pages: 26-32

Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 27
  • 2465
  • Pages: 20-25

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 33
  • 2099
  • Pages: 14-19

Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 41
  • 2255
  • Pages: 7-13