Latest issues
- 2024, Volume 17 Issue 3
- 2024, Volume 17 Issue 2
- 2024, Volume 17 Issue 1.1
- 2024, Volume 17 Issue 1 Full text
Articles from section "Bulk properties of semiconductors"
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 15
- 972
- Pages: 31-36
Destruction of the conducting state by ac electric field in naphthalocyanine complexes
- Year: 2024
- Volume: 17
- Issue: 1.1
- 15
- 857
- Pages: 25-30
Features of isovalent doping of gallium arsenide with bismuth ions
- Year: 2024
- Volume: 17
- Issue: 1.1
- 9
- 927
- Pages: 20-24
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 1014
- Pages: 12-19
Spin-dependent photon echo for an ensemble of three-level systems
- Year: 2024
- Volume: 17
- Issue: 1.1
- 30
- 871
- Pages: 6-11
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 18
- 2087
- Pages: 33-38
Magnetoresistivity and Hall effect in Weyl semimetal WTe2
- Year: 2023
- Volume: 16
- Issue: 1.3
- 85
- 2405
- Pages: 26-32
Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy
- Year: 2023
- Volume: 16
- Issue: 1.3
- 27
- 2310
- Pages: 20-25
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 33
- 1948
- Pages: 14-19
Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model
- Year: 2023
- Volume: 16
- Issue: 1.3
- 39
- 2112
- Pages: 7-13