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- 2025, Volume 18 Issue 1.1 Full text
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Articles from section "Bulk properties of semiconductors"
Non-ideal experimental Berry phase in the topological insulator Bi2Se3 single crystal
- Year: 2025
- Volume: 18
- Issue: 1.1
- 16
- 335
- Pages: 11-16
Spin-lattice relaxation processes of nuclear spins in GaAs:Mn
- Year: 2025
- Volume: 18
- Issue: 1.1
- 23
- 268
- Pages: 6-10
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 22
- 1984
- Pages: 31-36
Destruction of the conducting state by ac electric field in naphthalocyanine complexes
- Year: 2024
- Volume: 17
- Issue: 1.1
- 17
- 1791
- Pages: 25-30
Features of isovalent doping of gallium arsenide with bismuth ions
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 1970
- Pages: 20-24
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 48
- 2052
- Pages: 12-19
Spin-dependent photon echo for an ensemble of three-level systems
- Year: 2024
- Volume: 17
- Issue: 1.1
- 40
- 1926
- Pages: 6-11
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 20
- 3037
- Pages: 33-38
Magnetoresistivity and Hall effect in Weyl semimetal WTe2
- Year: 2023
- Volume: 16
- Issue: 1.3
- 94
- 3361
- Pages: 26-32
Study of properties of the nuclear spin system in bulk n-GaAs by warm-up spectroscopy
- Year: 2023
- Volume: 16
- Issue: 1.3
- 30
- 3298
- Pages: 20-25
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 36
- 2835
- Pages: 14-19
Analytical and numerical calculations of the magnetic properties of a system of disordered spins in the Ising model
- Year: 2023
- Volume: 16
- Issue: 1.3
- 43
- 2947
- Pages: 7-13