Latest issues
- 2025, Volume 18 Issue 3 Full text
- 2025, Volume 18 Issue 2 Full text
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1 Full text
Effect of FIB-modification of Si (111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 15
- 4723
- Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 4919
- Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 4546
- Pages: 48-53
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 4688
- Pages: 54-58
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 4645
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 4739
- Pages: 315-319
Droplet epitaxy of site-controlled In/GaAs (001) nanostructures with a variable distance: experiments and simulations
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 3689
- Pages: 41-46
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 38
- 4197
- Pages: 53-58
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 3537
- Pages: 64-68
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 3713
- Pages: 74-78
Effect of ion dose and accelerating voltage during focused ion beam Si (111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 3731
- Pages: 79-83
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2216
- Pages: 38-42
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs (111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 13
- 2407
- Pages: 58-62
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 13
- 2168
- Pages: 75-78