Chernenko Natalia E.

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 2916
  • Pages: 36-41

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 9
  • 2994
  • Pages: 42-47

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 2818
  • Pages: 48-53

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 2878
  • Pages: 54-58

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 2924
  • Pages: 59-63

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 2946
  • Pages: 315-319

Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 1878
  • Pages: 41-46

Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 33
  • 2210
  • Pages: 53-58

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 1844
  • Pages: 64-68

Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 1939
  • Pages: 74-78

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 14
  • 1936
  • Pages: 79-83

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 3
  • 496
  • Pages: 38-42

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 4
  • 493
  • Pages: 58-62

Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 465
  • Pages: 75-78

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