Danil  V. Kirichenko
Danil V. Kirichenko

Effect of FIB-modification of Si (111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 15
  • 5111
  • Pages: 36-41

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 5305
  • Pages: 42-47

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 4954
  • Pages: 48-53

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 19
  • 5107
  • Pages: 315-319

Droplet epitaxy of site-controlled In/GaAs (001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 4112
  • Pages: 41-46

Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 38
  • 4637
  • Pages: 53-58

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 3912
  • Pages: 64-68

Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 4099
  • Pages: 74-78

Effect of ion dose and accelerating voltage during focused ion beam Si (111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 4136
  • Pages: 79-83

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs (111) surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2775
  • Pages: 58-62

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2648
  • Pages: 79-83

Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 182
  • Pages: 19-22

Localized Ga droplets formation on nanopatterned silicon substrates

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 1
  • 139
  • Pages: 57-59

Formation of site-controlled InAs quantum dots on nanopatterned GaAs (111)B surfaces

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 1
  • 144
  • Pages: 115-118