Kirichenko Danil V.
Latest issues
- 2024, Volume 17 Issue 3
- 2024, Volume 17 Issue 2
- 2024, Volume 17 Issue 1.1
- 2024, Volume 17 Issue 1 Full text
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 2476
- Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 9
- 2587
- Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 2426
- Pages: 48-53
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 2527
- Pages: 315-319
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 1415
- Pages: 41-46
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 30
- 1707
- Pages: 53-58
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 1421
- Pages: 64-68
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 1453
- Pages: 74-78
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 1514
- Pages: 79-83