Kirichenko Danil V.
Latest issues
- 2024, Volume 17 Issue 3.1 Full text
- 2024, Volume 17 Issue 3
- 2024, Volume 17 Issue 2
- 2024, Volume 17 Issue 1.1
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 2616
- Pages: 36-41
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 9
- 2716
- Pages: 42-47
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 2558
- Pages: 48-53
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 2659
- Pages: 315-319
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 1563
- Pages: 41-46
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 31
- 1866
- Pages: 53-58
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 1555
- Pages: 64-68
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 1619
- Pages: 74-78
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 1643
- Pages: 79-83
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 1
- 136
- Pages: 58-62
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 2
- 135
- Pages: 79-83