Latest issues
- 2025, Volume 18 Issue 4.1 Full text
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 35
- 5200
- Pages: 157-162
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 3914
- Pages: 439-443
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 16
- 4017
- Pages: 249-254
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 2762
- Pages: 220-223
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 10
- 3588
- Pages: 100-104
High-sensitivity and low-noise GaN-based ultraviolet photodetectors
- Year: 2025
- Volume: 18
- Issue: 3.2
- 2
- 242
- Pages: 196-199