Andrey M. Mizerov
Andrey M. Mizerov

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 35
  • 5000
  • Pages: 157-162

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 3727
  • Pages: 439-443

Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 16
  • 3817
  • Pages: 249-254

GaN based ultraviolet narrowband photodetectors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2562
  • Pages: 220-223

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 10
  • 3398
  • Pages: 100-104

High-sensitivity and low-noise GaN-based ultraviolet photodetectors

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 5
  • Pages: 196-199