Moshnikov Vyacheslav A.
  • Publications

Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

Condensed matter physics
  • Year: 2010
  • Issue: 1
  • 1
  • 7178
  • Pages: 18-28

Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 600
  • 7570
  • Pages: 31-42

Colloidal CdSe and ZnSe/Mn quantum dots: their cytotoxicity and effect on cell morphology

Biophysics and medical physics
  • Year: 2015
  • Issue: 3
  • 2460
  • 10708
  • Pages: 86-95

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 56
  • 3512
  • Pages: 10-15

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 27
  • 2887
  • Pages: 43-48

Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 15
  • 3026
  • Pages: 393-397

Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 40
  • 2532
  • Pages: 9-19

Investigation of nanosized structures using internal friction effect

Structure growth, surface, and interfaces
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 15
  • 1798
  • Pages: 37-42

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