Anton  Chernyakov
Anton Chernyakov
Affiliation
Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS
Russia, 194021, St.Petersburg, Polytechnicheskaya, 26

Type LED dynamically controlled light sources for novel lighting technology

Experimental technique and devices
  • Year: 2014
  • Issue: 4
  • 468
  • 9312
  • Pages: 38-47

Thermal resistanсe and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

Experimental technique and devices
  • Year: 2015
  • Issue: 2
  • 353
  • 8667
  • Pages: 74-83

A study of thermal regime in the high-power LED arrays

Experimental technique and devices
  • Year: 2018
  • Volume: 11
  • Issue: 3
  • 32
  • 9368
  • Pages: 39-51

Hardware-software complex for characterization of a person’s functional status on exposure to light with the varied spectral color parameters

Experimental technique and devices
  • Year: 2019
  • Volume: 12
  • Issue: 3
  • 46
  • 8187
  • Pages: 63-77

Optimization of surgical field illumination to maximize the contrast when biological objects being visualized

Experimental technique and devices
  • Year: 2019
  • Volume: 12
  • Issue: 4
  • 42
  • 8441
  • Pages: 79-88

A comprehensive study of electroluminescence and temperature distribution of «UX:3» AlInGaN LED

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 15
  • 4747
  • Pages: 142-146

Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 21
  • 4240
  • Pages: 119-125

Comprehensive study of the power capabilities of UV-C LEDs in pulsed and continuous modes

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 11
  • 3988
  • Pages: 167-171

Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 31
  • 4435
  • Pages: 70-76

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 27
  • 4167
  • Pages: 170-175

Competing processes in nitride alloys in MQWs of LEDs

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 6
  • 1854
  • Pages: 177-181