Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures

Physical materials technology
Authors:
Uvarov A.V. Baranov A.I. Maksimova A.A. Vyacheslavova E.A. Pozdeev V.A. Mikhaylov O.P. Nikitina E.V. Gudovskikh A.S.
Abstract:

Plasma-enhanced atomic layer deposition (PE-ALD) was employed to deposit indium phosphide (InP) thin films on silicon substrates at temperatures ranging from 250 °C to 380 °C. Using trimethylindium and phosphine as precursors, the influence of deposition temperature on film growth rate, structural, and optical properties was investigated. A stable growth
per cycle (GPC) was observed within the 250−350 °C range, indicating self-limiting ALD behavior, while an increase in GPC at 380 °C suggested onset of non-ideal growth mechanisms.
Raman spectroscopy revealed improved crystallinity with increasing temperature, demonstrated by intensified longitudinal optical phonon peaks. Photoluminescence measurements showed near-band-edge emission around 1.36−1.39 eV, with a blue shift and narrowing of the emission peak at higher temperatures, indicating enhanced optical quality and reduced defect density.