Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

doi:10.18721/JPM.173.236

Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

Physical electronics

Authors:

Novikov Innokenty I. Sobolev Maxim S. Barantsev Oleg V. Vasilkova Elena I. Pirogov Evgeny V. Shubina Kseniia Yu. Baranov Artem I. Voropaev Kirill O. Vasil’ev Andrey A. Karachinsky Leonid Ya.

Abstract:

In_0.83Ga_0.17As/InP PIN-photodiode heterostructures with different doping levels have been grown by molecular beam epitaxy. Metamorphic buffer layers were applied to prevent misfit dislocations nucleation in active layers. Capacitance-voltage and current-voltage curves of fabricated photodiodes have been measured and analysed. The impact of various dark current mechanisms has been estimated after the measurements of current-voltage curves at different temperatures.