Articles by keywords "ion beam"
Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces
- Year: 2025
- Volume: 18
- Issue: 3.2
- 2
- 145
- Pages: 115-118
Localized Ga droplets formation on nanopatterned silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 1
- 139
- Pages: 57-59
Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 121
- Pages: 29-32
Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 183
- Pages: 19-22
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 2545
- Pages: 75-78
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 2776
- Pages: 58-62
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 19
- 2652
- Pages: 28-33
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 4136
- Pages: 79-83
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 4113
- Pages: 41-46
Fabrication of nanoscale structures by FIB-induced deposition of materials and study of their electrical properties
- Year: 2023
- Volume: 16
- Issue: 1.2
- 9
- 4502
- Pages: 218-223
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 5030
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 24
- 5044
- Pages: 54-58
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 4954
- Pages: 48-53
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 15
- 5111
- Pages: 36-41
Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 5642
- Pages: 8-12
An electrically powered ion accelerator with contact ionization for perspective electrically powered thrusters
- Year: 2020
- Volume: 13
- Issue: 2
- 58
- 8795
- Pages: 99-115
The contact ionization ion accelerator for the electrically powered spacecraft propulsion: a computer model
- Year: 2020
- Volume: 13
- Issue: 1
- 46
- 8657
- Pages: 78-91