Articles by keywords "ion beam"

Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 13
  • 1103
  • Pages: 75-78

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 10
  • 1193
  • Pages: 58-62

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 1118
  • Pages: 28-33

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 2557
  • Pages: 79-83

Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 2518
  • Pages: 41-46

Fabrication of nanoscale structures by FIB-induced deposition of materials and study of their electrical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 8
  • 2961
  • Pages: 218-223

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 18
  • 3498
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 22
  • 3470
  • Pages: 54-58

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 3389
  • Pages: 48-53

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 3520
  • Pages: 36-41

Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 3829
  • Pages: 8-12

An electrically powered ion accelerator with contact ionization for perspective electrically powered thrusters

Physical electronics
  • Year: 2020
  • Volume: 13
  • Issue: 2
  • 56
  • 7095
  • Pages: 99-115

The contact ionization ion accelerator for the electrically powered spacecraft propulsion: a computer model

Physical electronics
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 45
  • 7070
  • Pages: 78-91

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: