Articles by keywords "focused ion beam"

Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 688
  • Pages: 75-78

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 745
  • Pages: 58-62

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 706
  • Pages: 28-33

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 2165
  • Pages: 79-83

Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 19
  • 2117
  • Pages: 41-46

Fabrication of nanoscale structures by FIB-induced deposition of materials and study of their electrical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 7
  • 2571
  • Pages: 218-223

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 18
  • 3130
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 3113
  • Pages: 54-58

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 3026
  • Pages: 48-53

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 3142
  • Pages: 36-41

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