Articles by keywords "focused ion beam" | St. Petersburg Polytechnic University Journal: Physics and Mathematics

Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces

Atom physics and physics of clusters and nanostructures

Balakirev S.V. Chernenko N.E. Shandyba N.A. Kirichenko D.V. Dukhan D.D. Eremenko M.M. Solodovnik M.S.

Year: 2025
Volume: 18
Issue: 3.2

1
144
Pages: 115-118

Localized Ga droplets formation on nanopatterned silicon substrates

Condensed matter physics

Eremenko M.M. Shandyba N.A. Chernenko N.E. Kirichenko D.V. Balakirev S.V. Solodovnik M.S.

Year: 2025
Volume: 18
Issue: 3.2

1
139
Pages: 57-59

Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region

Condensed matter physics

Derkach N.N. Makhov I.S. Obraztsova A.A. Voitovich V.I. Komarov S.D. Fominykh N.A. Chernenko N.E. Shandyba N.A. Solodovnik M.S. Kryzhanovskaya N.V. Zhukov A.E.

Year: 2025
Volume: 18
Issue: 3.2

0
121
Pages: 29-32

Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment

Condensed matter physics

Shandyba N.A. Eremenko M.M. Dukhan D.D. Chernenko N.E. Kirichenko D.V. Kugaevsky A.D. Makhov I.S. Kryzhanovskaya N.V. Balakirev S.V. Solodovnik M.S.

Year: 2025
Volume: 18
Issue: 3.1

0
183
Pages: 19-22

Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching

Condensed matter physics

Eremenko M.M. Shandyba N.A. Chernenko N.E. Jityaeva J.Yu. Balakirev S.V. Solodovnik M.S.

Year: 2024
Volume: 17
Issue: 3.1

15
2545
Pages: 75-78

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface

Condensed matter physics

Lakhina E.A. Chernenko N.E. Shandyba N.A. Kirichenko D.V. Balakirev S.V. Solodovnik M.S.

Year: 2024
Volume: 17
Issue: 3.1

14
2776
Pages: 58-62

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics

Shandyba N.A. Eremenko M.M. Sharov V.A. Balakirev S.V. Solodovnik M.S.

Year: 2024
Volume: 17
Issue: 3.1

19
2652
Pages: 28-33

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics

Shandyba N.A. Kirichenko D.V. Chernenko N.E. Sharov V.A. Balakirev S.V. Solodovnik M.S.

Year: 2023
Volume: 16
Issue: 3.1

16
4136
Pages: 79-83

Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations

Condensed matter physics

Balakirev S.V. Kirichenko D.V. Shandyba N.A. Chernenko N.E. Solodovnik M.S.

Year: 2023
Volume: 16
Issue: 3.1

20
4112
Pages: 41-46

Fabrication of nanoscale structures by FIB-induced deposition of materials and study of their electrical properties

Physical materials technology

Kotosonova A.V. Kolomiytsev A.S. Soboleva O.I.

Year: 2023
Volume: 16
Issue: 1.2

9
4502
Pages: 218-223

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics

Nikitina L.S. Lakhina E.A. Eremenko M.M. Balakirev S.V. Chernenko N.E. Shandyba N.A. Solodovnik M.S. Ageev O.A.

Year: 2022
Volume: 15
Issue: 3.3

23
5030
Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics

Eremenko M.M. Balakirev S.V. Chernenko N.E. Shandyba N.A. Solodovnik M.S. Ageev O.A.

Year: 2022
Volume: 15
Issue: 3.3

24
5044
Pages: 54-58

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics

Chernenko N.E. Kirichenko D.V. Shandyba N.A. Balakirev S.V. Eremenko M.M. Solodovnik M.S.

Year: 2022
Volume: 15
Issue: 3.3

17
4954
Pages: 48-53

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics

Shandyba N.A. Kirichenko D.V. Chernenko N.E. Eremenko M.M. Balakirev S.V. Solodovnik M.S.

Year: 2022
Volume: 15
Issue: 3.3

15
5111
Pages: 36-41