Articles by keywords "III-V" | St. Petersburg Polytechnic University Journal: Physics and Mathematics

Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment

Shandyba N.A. Eremenko M.M. Dukhan D.D. Chernenko N.E. Kirichenko D.V. Kugaevsky A.D. Makhov I.S. Kryzhanovskaya N.V. Balakirev S.V. Solodovnik M.S.

Year: 2025
Volume: 18
Issue: 3.1

0
183
Pages: 19-22

Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy

Simulation of physical processes

Dukhan D.D. Balakirev S.V. Voloshina E.N. Solodovnik M.S.

Year: 2024
Volume: 17
Issue: 3.1

14
2886
Pages: 100-104

Optical properties of single InGaN nanowires with core-shell structure

Physical optics

Komarov S.D. Gridchin V.O. Lendyashova V.V. Kotlyar K.P. Reznik R.R. Dvoretskaya N.V. Dragunova A.S. Makhov I.S. Nadtochiy A.M. Kryzhanovskaya N.V. Cirlin G.E. Zhukov A.E.

Year: 2023
Volume: 16
Issue: 1.2

48
4806
Pages: 114-120

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics

Reznik R.R. Gridchin V.O. Kotlyar K.P. Dragunova A.S. Kryzhanovskaya N.V. Samsonenko Yu.B. Soshnikov I.P. Khrebtov A.I. Cirlin G.E.

Year: 2023
Volume: 16
Issue: 1.1

24
4495
Pages: 153-157

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology

Melnichenko I.A. Kryzhanovskaya N.V. Berdnikov Yu.S. Moiseev E.I. Makhov I.S.

Year: 2022
Volume: 15
Issue: 3.3

21
5185
Pages: 260-264

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics

Reznik R.R. Gridchin V.O. Kotlyar K.P. Ubyivovk E.V. Dragunova A.S. Kryzhanovskaya N.V. Cirlin G.E.

Year: 2022
Volume: 15
Issue: 3.3

26
5380
Pages: 31-35