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Publications
Orcid ID
0000-0001-7521-3754
Temperature evolution of GaP nanowires photoelectronic properties
- Year: 2024
- Volume: 17
- Issue: 1.1
- 31
- 2818
- Pages: 119-124
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 42
- 3509
- Pages: 120-133
Luminescence enhancement in inelastic tunnelling of electrons by changing the geometry of the tunnelling contact
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2212
- Pages: 236-240
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 31
- 3176
- Pages: 9-21