Latest issues
- 2025, Volume 18 Issue 3 Full text
- 2025, Volume 18 Issue 2 Full text
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1 Full text
Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup
- Year: 2023
- Volume: 16
- Issue: 1.1
- 30
- 4653
- Pages: 309-314
Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique
- Year: 2023
- Volume: 16
- Issue: 1.3
- 38
- 4029
- Pages: 39-43
A theoretical study of macromolecule interaction with the quasi-free-standing and epitaxial graphene formed on the silicon carbide polytypes
- Year: 2023
- Volume: 16
- Issue: 3
- 211
- 4380
- Pages: 87-94
The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range
- Year: 2024
- Volume: 17
- Issue: 1
- 53
- 3804
- Pages: 9-20