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Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 8435
- Pages: 25-30
Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)
- Year: 2014
- Issue: 1
- 3
- 8010
- Pages: 157-163
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 84
- 5252
- Pages: 32-43
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 62
- 3281
- Pages: 12-19
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 3276
- Pages: 68-76