Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 8728
- Pages: 25-30
Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)
- Year: 2014
- Issue: 1
- 3
- 8309
- Pages: 157-163
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 86
- 5607
- Pages: 32-43
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 66
- 3699
- Pages: 12-19
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 3619
- Pages: 68-76
The effect of heating and drift of electrons in an electric field on the absorption and refraction of terahertz radiation in electronic indium antimonide
- Year: 2025
- Volume: 18
- Issue: 4
- 1
- 111
- Pages: 114-126