Andrei E. Nikolaev
Andrei E. Nikolaev

Influence of aluminum content in blocking layer on properties of green InGaAlN LEDs

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 357
  • 8932
  • Pages: 31-36

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 26
  • 5168
  • Pages: 21-24

2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 31
  • 4332
  • Pages: 380-384

Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 30
  • 4223
  • Pages: 50-54

Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 20
  • 3434
  • Pages: 46-51

Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 68
  • Pages: 125-128

Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 75
  • Pages: 143-147

Optical properties of disk microresonators based on wide-bandgap III-N materials

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 1
  • 58
  • Pages: 209-213