Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Influence of aluminum content in blocking layer on properties of green InGaAlN LEDs
- Year: 2013
- Issue: 4
- 357
- 8932
- Pages: 31-36
Optimization of InGaN-based luminescent heterostructures by genetic algorithm
- Year: 2022
- Volume: 15
- Issue: 3.2
- 26
- 5168
- Pages: 21-24
2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 4332
- Pages: 380-384
Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates
- Year: 2023
- Volume: 16
- Issue: 1.3
- 30
- 4223
- Pages: 50-54
Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content
- Year: 2025
- Volume: 18
- Issue: 1.1
- 20
- 3434
- Pages: 46-51
Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 68
- Pages: 125-128
Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry
- Year: 2025
- Volume: 18
- Issue: 3.1
- 2
- 75
- Pages: 143-147
Optical properties of disk microresonators based on wide-bandgap III-N materials
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 58
- Pages: 209-213