Articles by keywords "transistor"

Radiation hardness of n–p–n type bipolar transistor for voltage regulators

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 7
  • 744
  • Pages: 149-154

Thin reduced graphene oxide based films for nanoelectronics and sensors

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 7
  • 846
  • Pages: 23-29

Field plates design optimization to increase breakdown voltage of GaN HEMT

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 22
  • 3420
  • Pages: 204-209

A microwave method for measuring the low-frequency noise of transistors

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 24
  • 4516
  • Pages: 61-70

Simulation and analysis of heterostructures for normally-off p-channel GaN transistor

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 33
  • 4641
  • Pages: 449-453

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 4588
  • Pages: 133-137

In situ conductance studies of electrochemically doped polymer thin films based on nickel-salen complexes

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 22
  • 5411
  • Pages: 90-95

GaN IC E-mode p-channel and n-channel transistors simulation

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 27
  • 5643
  • Pages: 134-137

Optimization of heterostructure transistor parameters for the monolithic integrated circuits of the amplifying path of a medical radiothermograph

Physics of molecules
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 11
  • 5476
  • Pages: 326-330

Algorithm and installation for measuring the current lacing voltage in high-power RF and microwave bipolar and heterojunction bipolar transistors

Experimental technique and devices
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 9
  • 5877
  • Pages: 97-101

Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

Condensed matter physics
  • Year: 2010
  • Issue: 1
  • 1
  • 9369
  • Pages: 18-28