SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles by keywords "transistor"

Radiation hardness of n–p–n type bipolar transistor for voltage regulators

Physical electronics
Rybalka S.B. Sitnikov Yu.A. Kulchenkov E.A. Demidov A.A.
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 3
  • 207
  • Pages: 149-154

Thin reduced graphene oxide based films for nanoelectronics and sensors

Condensed matter physics
Babenko S.I. Bryleva A.S. Kanaev K.V. Kudryavtsev O.A. Nigmatullina R.R. Rayanova K.A. Sudakova A.D. Trukhanova M.I. Komarov I.A.
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 269
  • Pages: 23-29

Field plates design optimization to increase breakdown voltage of GaN HEMT

Physical electronics
Kozlovskaya E.A. Kurbanbaeva D.M. Tsarik K.A. Lashkov A.V.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 20
  • 2825
  • Pages: 204-209

A microwave method for measuring the low-frequency noise of transistors

Experimental technique and devices
Usychenko V. G. Chernova A. S.
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 21
  • 3894
  • Pages: 61-70

Simulation and analysis of heterostructures for normally-off p-channel GaN transistor

Physical electronics
Kozlovskaya E.A. Kurbanbaeva D.M. Tsarik K.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 30
  • 4106
  • Pages: 449-453

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
Nikitina E.V. Berezovskaya T.N. Pirogov E.V. Vasilkova E.I. Shubina K.Yu. Sinitskaya O.A. Sobolev M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 4035
  • Pages: 133-137

In situ conductance studies of electrochemically doped polymer thin films based on nickel-salen complexes

Physical electronics
Smirnova E.A. Chepurnaya I.A.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 22
  • 4850
  • Pages: 90-95

GaN IC E-mode p-channel and n-channel transistors simulation

Physical electronics
Egorkin V.I. Zemlyakov V.E. Zaitsev A.A. Chukanova O.B.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 5106
  • Pages: 134-137

Optimization of heterostructure transistor parameters for the monolithic integrated circuits of the amplifying path of a medical radiothermograph

Physics of molecules
Tikhomirov V.G. Chizhikov S.V. Gudkov A.G. Nikolaenkov A.V. Gudkov G.A.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 9
  • 4940
  • Pages: 326-330

Algorithm and installation for measuring the current lacing voltage in high-power RF and microwave bipolar and heterojunction bipolar transistors

Experimental technique and devices
Litvinov K.A. Radaev O.A. Kozlikova I.S. Sergeev V.A. Kulikov A.A.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 9
  • 5352
  • Pages: 97-101

Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

Condensed matter physics
Kozlovsky E.Yu. Spivak Yu.M. Moshnikov V.A. Ponomareva Alina A. Seleznev B.I. Ivanov N.N. Jelannov A.V.
  • Year: 2010
  • Issue: 1
  • 1
  • 8884
  • Pages: 18-28