Lakhina Ekaterina A.
Latest issues
- 2024, Volume 17 Issue 3.1 Full text
- 2024, Volume 17 Issue 3
- 2024, Volume 17 Issue 2
- 2024, Volume 17 Issue 1.1
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 2649
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 2661
- Pages: 315-319
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 31
- 1868
- Pages: 53-58
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 1612
- Pages: 122-127
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 1
- 141
- Pages: 58-62