Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 4975
- Pages: 59-63
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 5061
- Pages: 315-319
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 38
- 4581
- Pages: 53-58
Effect of plasma-chemical treatment of Si (001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 3993
- Pages: 122-127
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs (111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 2726
- Pages: 58-62